Radiation Effects in Quantum Devices
Abstract
Experiments were performed to determine the effect of radiation on quantum devices. The devices included resonant tunneling devices and two-dimensional electron gas devices. None of the devices were radiation-hardened prior to testing. The radiation used in the tests included gamma rays, protons, neutrons, and heavy ions. Resonant tunneling devices were found to possess significant radiation tolerance. None of these devices showed any systematic effects as a result of irradiation up to 1 Mrad of gamma rays, 3.5x10(exp 11) protons/cm2 at 55 MeV, 5x10(exp 10) neutrons/cm2 with energies from 1.5 to 800 MeV, and to 1x10(exp 7) Kr ions/cm2 with an LET = 35 MeV-cm2/mg. Two-dimensional electron gas devices, including quantum transistors and MODFET structures, were irradiated by gammas to 50 krad, protons to 5x10(exp 10) protons/cm2, and neutrons to 3x10(exp 10) neutrons/cm2. These devices displayed transient effects due to gamma and proton irradiation. Gamma irradiation produced a depression of the device current that recovered completely over periods of hours. Proton bombardment produced an enhancement of the device currents that did not anneal completely over similar periods. Neutron irradiation produced no effects on the devices. Taken as a whole, these results indicate that quantum devices represent a prime candidate for application in radiation-harsh environments.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 2000
- Accession Number
- ADA383248
Entities
People
- Gregory F. Spencer
- Richard Wilkins
- Robert T. Bate
- Wiley P. Kirk
Organizations
- University of Texas at Arlington