Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency
Abstract
The principal goal of the ongoing program is the enhancement of the functionality of silicon by expanding its field of use to include a higher frequency of operation via the integration of silicon-based IC circuits and GaN-based HFETs to produce variable gain amplifiers as the proof of concept of an electronic microsystem. This will be demonstrated by on-chip digital control of the gain of the GaN HFET device using a CMOS gate circuit. During this reporting period, NCSU and Nitronex have completed the construction and commissioning of two proprietary 100 mm III-Nitride MOVPE systems, developed a process route for the growth of GaN on Si(111), demonstrated growth of GaN on 50-mm and 100-mm diameter Si(111) substrates, and transferred in-house pendeo-epitaxy techniques developed from NCSU to Nitronex. Also during this reporting period, CTRI developed a wafer processing procedure, validated each process step and fabricated working devices on sapphire substrates. Transconductance of these devices is approximately 140 mS/mm and the saturated drain to source current at zero gate bias is 700m A/mm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 2000
- Accession Number
- ADA383629
Entities
People
- Kevin J. Linthicum
- Robert F Davis
Organizations
- North Carolina State University