MOCVD Upgrade

Abstract

The goal of this research program is to develop a novel technology for the epitaxial growth and fabrication of vertical-cavity surface-emitting laser structures with lasing wavelengths in the 110 nm to 1500 nm regime, with special emphasis on the 1300 nm VCSEL's and monolithic VCSEL arrays These are useful for the parallel optical data links that will interconnect future computer networks, whose nodes may be distributed across a wide range of distances and are interconnected by optical fibers. The use of 1300 nm VCSEL's will provide improved fiber transmission performance as well as a more unified technology platform for the different levels of the interconnect hierarchy. The GalnNAs!GaAs VCSEL technology represents a novel approach that is potentially manufacturable using conventional growth systems and device fabrication techniques.

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Document Details

Document Type
Technical Report
Publication Date
Sep 21, 2000
Accession Number
ADA383863

Entities

People

  • Julian Cheng

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Computer Networks
  • Current Density
  • Distributed Bragg Reflectors
  • Epitaxial Growth
  • Fabrication
  • Laser Diodes
  • Long Wavelengths
  • Materials
  • Modules (Electronics)
  • New Mexico
  • Operating Systems
  • Power Electronics
  • Quantum Efficiency
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Parallel and Distributed Computing.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy