Center for Non-Stoichiometric Semiconductors
Abstract
Research under the PRET program has covered a varied range of materials and device applications. Early work was directed mostly toward understanding and implementing low-temperature grown (LTG) GaAs into field-effect transistors (FETs) providing increased breakdown voltages and a reduced noise performance. In recent years the research has been redirected into the newly emerging area of oxides and oxide electronics. Oxide produced from the steam oxidation of aluminum containing semiconductors has found widespread applications in the area of opto-electronics, specifically in vertical cavity lasers. In the research performed under the PRET program, additional applications in electronics, such as an insulating buffer in GaAs-On-Insulator (GOI) technology, as a lattice-engineered-substrate (LES), and most recently as a current aperture in high-speed heterojunction bipolar transistors (HBTs), have been implemented and studied. All of which have been shown, or potentially show, improved performances in devices, or introduced as yet unseen applications in material science.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 2000
- Accession Number
- ADA384157
Entities
People
- Umesh Mishra
Organizations
- University of California, Santa Barbara