Epitaxial Growth and Fabrication of Highly Strained Heterostructures
Abstract
Room temperature (RT) pulsed operation of blue nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates were achieved. Emission wavelengths as long as 425nm were obtained. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In(0.21)Ga(0.79)N, (2.5nm)/In(0/07)Ga(0.93)N (5nm) InGaN MQW. The threshold current density was reduced by a factor of 2 from 10 kA/sq cm for laser diodes grown on sapphire substrates to 4.8 kA/sq cm for laser diodes grown on LEO GaN on sapphire. These results show that a reduction in nonradiative recombination from a reduced dislocation density leads to a higher internal quantum efficiency. The researchers would like to thank the generous support and guidance of Dr. John Zavada. Further research on lateral epitaxial overgrowth (LEO) is needed to extend the wavelength to 490nm which is required for numerous bio-chemical sensing applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 22, 2000
- Accession Number
- ADA384181
Entities
People
- Steve P. Denbaars
Organizations
- University of California, Santa Barbara