Kinetic-Energy-Enhanced Neutral Etching
Abstract
The goal of this project is to develop an understanding of kinetic-energy-enhanced effects in the processing/etching steps of semiconductor fabrication. An instrument was developed that uses a kinetic-energy-variable argon ion source together with independent dosing of neutral reactive molecules to probe the evolution of neutral and ionic products during etching. These products are probed by laser ionization. Studies determined the effects of ion beam energy on the yields of neutral and ionic silicon and silicon chloride products during the etching of silicon by chlorine. The temperature dependence of the neutral and ion products was measured.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 23, 2000
- Accession Number
- ADA384189
Entities
People
- Stephen R. Leone
Organizations
- JILA