Native-Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectronic Devices: Al-Based III-V Native Oxides

Abstract

The study and use of Al-based III-V native oxide in quantum well heterostructure (QWH) devices has been pioneered in this project, and since the time of its introduction (1990) has grown into an international activity. An almost all-oxide enclosed microcavity laser and LED have been realized In the latter stages of this project. By employing a tunnel junction contact as a mechanism to invert lateral (edgewise) electron current into injection hole current (and thus accomplish laterally offset carrier injection), we have demonstrated oxide-confined edge emitter and vertical cavity surface emitting lasers (VCSELs) driven entirely with lateral electron currents, and thus with reduced resistive losses in spite of the offset current source. This is potentially important for optoelectronic IC development. The use of the Al-based III-IV native oxide to thwart hydrolyzation and increase device reliability has been demonstrated.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2000
Accession Number
ADA384363

Entities

People

  • N. Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Distributed Bragg Reflectors
  • Electronics Industry
  • Electronics Laboratories
  • Field Effect Transistors
  • Lasers
  • Military Research
  • Optoelectronic Devices
  • Optoelectronics
  • Oxides
  • Quantum Well Lasers
  • Quantum Wells
  • Reliability
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors
  • Surface Emitting Lasers

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Optical Physics and Photonics.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing