Ultrafast Quantum Well Optoelectronic Devices
Abstract
This project investigated novel optoelectronic switching and gating devices. These are based on the use of quantum well structures and electronic diodes. The devices can be used as optically controlled optical gates, allowing one light signal to pass in response to the presence of another optical signal, with the gating controlled by applied or induced electrical biases. Though the devices are internally optoelectronic, an important feature is that the speed of operation of the device is governed by very fast internal electrical processes, not by external properties such as the resistive-capacitive time constant of the entire device or the external circuit. Another feature of the device is that the operating optical energies are relatively low. The project has successfully demonstrated several different generations of devices, including a version using one quantum well diode and an advanced structure using two separate diodes. This latter structure allowed higher speed switching because it avoided the necessity for photogenerated carriers to escape from the quantum wells. Device speeds in the picosecond range and burst repetition rates of approximately 50 GHz have been demonstrated The operation of the device has also been successfully modeled, including a novel multilayer modeling method.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 14, 2000
- Accession Number
- ADA384413
Entities
People
- David A. Miller
Organizations
- Stanford University