First-Principles Theory of Transition Metal Impurities in Silicon Carbide

Abstract

A theoretical study of the electronic structure of selected transition metal impurities in silicon carbide is carried out using a first-principles approach. Polytype dependence, site preference and charge and spin states are investigated.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 14, 2000
Accession Number
ADA385216

Entities

People

  • Walter R. Lambrecht

Organizations

  • Case Western Reserve University

Tags

Communities of Interest

  • Advanced Electronics
  • Human Systems

DTIC Thesaurus Topics

  • Angular Momentum
  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Energy Levels
  • High Pressure
  • Impurities
  • Metals
  • Phase Transformations
  • Phonons
  • Point Defects
  • Silicon Carbide
  • Solid State Physics
  • Spin States
  • Students
  • Transition Metals
  • Transitions

Fields of Study

  • Physics

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene