Novel SiC High Power IC Technology

Abstract

The devices used in the military need to be of high voltage, high temperature and high frequency. Silicon Carbide is a suitable material for the development of such materials. Power Semiconductor Research Center is a leader in this research area to use Silicon Carbide. Simulation results showed that Lateral RESURF MOSFETs with breakdown voltage up to 1600 volts can be made. The behavior of RESURF devices are provided. The overview of RESURF diode and MOSFETs are given. Process techniques are also provided. In order to fabricate 4H-Silicon Carbide Lateral N-Channel MOSFETs, P-Channel MOSFETs in a thin active Silicon Carbide layer formed on top of a high resistivity isolation layer, Hydrogen and Helium can be used to produce deep layer traps.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 2000
Accession Number
ADA385324

Entities

People

  • A. Venkateswaran
  • Bayant Jayant Baliga
  • P. Mehrotra
  • P. R. Singh
  • S. Sonkusale

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Diodes
  • Electric Fields
  • Elements
  • High Voltage
  • Hydrogen
  • Implantation
  • Ion Implantation
  • Materials
  • Schottky Diodes
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Simulations
  • Voltage

Readers

  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene