GaN MISFETs

Abstract

Objectives are to conduct experimental and theoretical studies to demonstrate and analyze the advantages offered by AlN/GaN MISFETs: MOCVD Growth of high-quality AlN/GaN heterostructures; Simulate AlN/GaN MIS structures and MISFETs; Develop high-power AlN/GaN MISFETs and Amplifiers; Characterize DC, low- and high-frequency, and power performance of AlN/GaN MISFETs.

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Document Details

Document Type
Technical Report
Publication Date
Jun 13, 2000
Accession Number
ADA385757

Entities

People

  • Dimitris Pavlidis

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Amplifiers
  • Compound Semiconductors
  • Computer Science
  • Electrical Engineering
  • Electrical Properties
  • Electron Mobility
  • Electronics
  • Field Effect Transistors
  • Frequency
  • Heterojunctions
  • Integrated Circuits
  • Mobility
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology