Uncompensated Garnet - A Magnetic Semiconductor
Abstract
Ca-substituted YIG single crystal films (Ca:YIG) show p-type conduction while Si or Ge doped YIG garnets (Si:YIG or Ge:YIG) have n-type conduction. Both garnet films maintain their superior magnetic properties of pure YIG, while their electrical resistance approaches that of a semiconductor. Bilayers of Si/Ca doped YIG film were grown as a p/n junction and found to have significant p/n junction diode behavior. However, a voltage of 60 to 80 volts is required to observe a significant contribution to the asymmetry. The details of the I-V curves were also found to depend on the thickness of the Ca:YIG underlayer and the position of the contacts. In the Ca:YIG films a very sharp drop in the resistance was observed between 0 and +/- 5 G. At zero volts the resistivity was on the order of 1000 ohm.m and at +/- 5 G it is reduced to 2 ohm.m a surprising result. Since the conclusion of this work, a significant magneto resistance of a few percent has also been observed in the Ca:YIG films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1998
- Accession Number
- ADA386023
Entities
People
- P. E. Wigen
Organizations
- Ohio State University