Three Dimensional Self-Assembled Electronic Nanostructures and Materials from Molecular Precursors
Abstract
This work developed chemical self-assembly methods for the fabrication of high dielectric oxide thin films and nanometer-scale electronic devices. The experimental emphasis was on preparation and testing of thin film dielectrics for memories, fabrication of single electron transistors, nucleation/growth of colloidal crystals, template synthesis of metal nanowires, and synthesis/combinatorial selection of alloy nanocrystals for chemical sensor applications. The thin film assemblies were deposited chemically from building blocks with characteristic dimensions of nanometers to microns: lamellar inorganic dielectrics, sol-gel metal oxide monolayers, polymer chains, colloidal metal and semiconductor particles, and nanowires. Thin films were grown by colloid adsorption, and by sol-gel processing of molecular precursors. Understanding and controlling self-assembly in these systems required theoretical development and computer simulations. Much of the theoretical effort was devoted to issues of simulation and visualization of particle self-assembly in one and two dimensions. Dynamical lattice gas models were developed, in order to model the assembly of mesoscopic particles. Two important successes of this project were: (1) development of methods for making patterned, high dielectric thin film oxides by combining microcontact printing with inorganic self assembly, and (2) development of a combinatorial technique for identifying highly active alloy nanoparticle catalysts for amperometric sensors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 2000
- Accession Number
- ADA386037
Entities
People
- Thomas E. Mallouk
Organizations
- Pennsylvania State University