Assembly of Ge Quantum-Dots on Silicon: Applications to Nanoelectronics

Abstract

There are four publications related to this project. They are. entitled as follows: 1. Microstructural Development and Optical Properties of Epitaxial GE1-xCX Alloys on Si (100). 2. The Ge-C Local Mode in Epitaxial GeC and Ge-rich GeSiC Alloys. 3. Incorporation and Stability of Carbon During Low-Temperature Epitaxial Growth of Gel-xCx (x less than 0.1) Alloys on Si(l00): Microstructural and Raman Studies. 4. Low-temperature Epitaxial Growth of Ge-Si-C Alloys: Microstructure, Raman Studies, and Optical Properties.

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Document Details

Document Type
Technical Report
Publication Date
Nov 27, 2000
Accession Number
ADA386604

Entities

People

  • Mohan Krishnamurthy

Organizations

  • Michigan Technological University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Diffraction
  • Electron Microscopy
  • Epitaxial Growth
  • Materials
  • Materials Engineering
  • Measurement
  • Microscopes
  • Optical Properties
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Silicon Carbide
  • Spectroscopy
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Quantum Computing