Antimonide-Based Multiple Spectra Infrared Imaging Arrays Grown on GaAs by Compliant Epitaxy

Abstract

The research program consists of formation of a strain-modulated amorphous template and selective area template with a strain-absorbing buried oxide layer formed by lateral oxidation, then develop a two-wavelength infrared imaging array in the 3-8 micron range by integrating InAs(x)Sb(1-x) PINs with GaAs driving electronic circuits.

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Document Details

Document Type
Technical Report
Publication Date
Oct 17, 2000
Accession Number
ADA386726

Entities

People

  • K. C. Hsieh
  • K. Y. Cheng

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Circuits
  • Compound Semiconductors
  • Diffraction
  • Electronic Circuits
  • Engineering
  • Epitaxial Growth
  • Films
  • Instrumentation
  • Ion Pumps
  • Mechanics
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Power Supplies
  • Semiconductors
  • Spectra
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene