Epitaxial Lateral Overgrowth of II-VI Semiconductors

Abstract

Epitaxial lateral overgrowth of CdTe was carried out on Si and GaAs substrates. Perfectly selective epitaxial growth was demonstrated on CdTe/Si and GaAs substrates using Si3N4 as the mask material. Selective growth has been possible at T>5OO deg C and pressure <30 Torr. Lateral to vertical growth rate ratio of >3 has been achieved. Reduction in defect density in films has been demonstrated.

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Document Details

Document Type
Technical Report
Publication Date
Feb 28, 2001
Accession Number
ADA387417

Entities

People

  • Ishwara B. Bhat

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Crystals
  • Diffraction
  • Electron Microscopes
  • Epitaxial Growth
  • Films
  • Grain Boundaries
  • Mass Transfer
  • Materials
  • Microscopy
  • Military Research
  • Semiconductors
  • Single Crystals
  • Substrates
  • Two Dimensional
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene