BST Capacitors for Cryogenic Focal Plane Arrays
Abstract
The purpose of this project was to enhance the performance of Infrared Focal Plane Array (IRFPA) detectors through the replacement of SiO2 in the integrating capacitor of each array pixel by a material with a higher dielectric constant. The increase in storage capacity that results from this replacement enables the following: design of more complex circuits in each cell; use of longer integration times with increased sensor standoff range; design of smaller cell sizes for 2-color and un-cooled sensor arrays; and detection of low contrast targets/aim points in the presence of radiation from hot missile domes. In Phase I, the feasibility of realizing a charge storage density increase was demonstrated by depositing high dielectric constant Ba(1-x)Sr(x)TiO3 (BST) thin films using Metal Organic Chemical Vapor Deposition (MOCVD). In phase II, this work was extended, and achieved the following goals: A conventional MOCVD process, developed in Phase I, was optimized for the cryogenic operation of BST thin films. A novel Digital MOCVD process for the fabrication of BST thin films was developed and patented. The use of low deposition temperature amorphous oxide thin films for cryogenic applications was demonstrated. The MOCVD process compatibility with current CMOS chip technology was characterized.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 2000
- Accession Number
- ADA387497
Entities
People
- Frank Dimeo