Heterostructure Integrated Thermionic Coolers
Abstract
The first semiconductor thermionic cooler was demonstrated during the past year. It was implemented in InGaAsP and performs as predicted theoretically. The goal is demonstrating high cooling powers with materials that can be integrated with photonic devices i.e. InGaAsP. This should allow cost effective cooling of individual elements in wavelength division multiplexing (WDM) components. The first superlattice thermionic cooler was demonstrated. With the proper design of superlattices, we should be able to increase the thermal resistance without increasing the electrical resistance. This is needed in any thermionic or thermoelectric cooler; however, for virtually all semiconductors, higher thermal resistance and higher electrical resistance move together. This is important for getting larger temperature differences between hot and cold junctions. The first p type thermionic cooler was demonstrated, although with poorer performance than predicted because of a contact resistance problem. Both p and n type thermionic cooler are needed to build integrated structures. The theory of thermionic coolers was expanded to include Monte Carlo calculations of electron transport and model the coolers more accurately. The predicted results are slightly better than our earlier calculations based on a Richardson model, because ballistic transport of electrons results in energy being deposited preferentially closer to the hot junction.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 27, 2001
- Accession Number
- ADA387542
Entities
People
- A. Shakouri
- J. E. Bowers
- V. Narayanamurti
Organizations
- University of California, Santa Barbara