Research of Possibility of Semi-Conducting CdGeAs2 Making by the Way of Deep Impurities Doping

Abstract

This report results from a contract tasking Advanced Technologies for Optical Materials (ATOM) as follows: The contractor will develop methods of semi-conducting high-resistance CdGeAs2 crystal production by way of control doping by the impurities Cu, Au, Zn, Sc, and Se. Selection of the most promising impurities and optimization of the doping technology will allow minimization of optical loses in CdGeAs2-crystals and related to manufacture of ternary CdGeAs2 crystals with low absorption coefficient for practical purposes of nonlinear optics

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Document Details

Document Type
Technical Report
Publication Date
Jan 22, 2001
Accession Number
ADA387713

Entities

People

  • Valeri G. Voevodine

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charge Carriers
  • Coefficients
  • Contractors
  • Contracts
  • Crystal Structure
  • Crystallization
  • Crystallography
  • Crystals
  • Electron Mobility
  • Electrons
  • Heat Treatment
  • Impurities
  • Materials
  • Optical Materials
  • Physical Properties
  • Recrystallization
  • Resistance

Readers

  • Library and Information Science/ Studies, Southeast Asia Studies, Bibliography of Vietnam and Lao Studies.
  • Optical Physics and Photonics.
  • Thin Film Deposition Science.