Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs

Abstract

The major aim of our research has been a theoretical investigation of (1) important point defect complexes in low-temperature-grown (LT) GaAs and (2) the microscopic processes occurring at the surface during growth of GaAs films, which determine how much excess arsenic will be incorporated into the material.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1999
Accession Number
ADA389197

Entities

People

  • Caroline G. Morgan

Organizations

  • Wayne State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Band Structures
  • Conduction Bands
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Cubic Lattices
  • Dynamics
  • Energy Bands
  • Epitaxial Growth
  • First Principles Calculations
  • Low Temperature
  • Materials
  • Materials Science
  • Point Defects
  • Solid State Physics
  • Transitions

Fields of Study

  • Materials science

Readers

  • Canadian European Scientific Immigration and Epilepsy Clearance Studies
  • Fluid Dynamics.
  • Materials Science and Engineering.