GaInAsN/InP Lasers With Low Linewidth Enhancement Factor

Abstract

This contract has resulted in three major research: accomplishments: (1) epitaxial growth of GaAsN and InGaAsN with excellent optical properties, (2) detailed understanding of kinetics of the nitrogen incorporation in (In)GaAsN, and (3) growth of high quality GaN, AlN and AlGaN, over the entire range of compositions, by gas source molecular beam epitaxy. These three areas are discussed in the report.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2001
Accession Number
ADA389294

Entities

People

  • Henryk Temkin

Organizations

  • Texas Tech University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Compound Semiconductors
  • Contracts
  • Crystal Growth
  • Epitaxial Growth
  • Kinetics
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nitrogen
  • Optical Properties
  • Physics
  • Quantum Wells
  • Semiconductors
  • Transitions
  • Two Dimensional
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy