Silicon Carbide and Related Materials: ECSCRM2000
Abstract
The Third European Conference on Silicon Carbide and Related Materials (ECSCRM2000), held September 3-7, 2000 in Kloster Banz, Germany, developed into a truly important forum in the field of wide bandgap semiconductors. All continents - some 320 participants from 21 different countries - were represented and 15 exhibitors maintained booths and demonstrated the increasingly industrial interest in and the economic impact of the wide bandgap semiconductors. Scientists from Universities and Industry discussed the exciting progress in the fields of SiC and III-Nitrides. Many young scientists have been among the participants; they are regarded as the guarantee to successfully solve the forthcoming tasks. These proceedings reveal the present experimental and theoretical knowledge on the growth of bulk crystals and epitaxial layers, the mechanical, thermal and electronic properties of the grown material, the development of suitable processes and electronic devices, which will have a profound effect on society's ability to better utilize its strategic resources in the future.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 2000
- Accession Number
- ADA389451
Entities
People
- D. Stephani
- G. Pensl
- M. Hundhausen