Power Semiconductor Simulation
Abstract
This document describes the development of the Hydrodynamic Power Semiconductor Device Simulator (HPSDS), which solves the quantum mechanical hydrodynamic balance equations for the electrons and holes along with the Poisson equation, for a LW dimensional device. The program will compute the electrostatic potential, electron and hole densities, recombination rate, electron and hole velocities, current densities, electron and hole temperatures, and other quantities of interest as functions of applied bias. The program allows extensive analysis of unipolar, bipolar, and heterostructure devices. Power devices such as thyristor and other four or five terminal devices are treated under all possible operating conditions. Both steady state and transient operating conditions can be considered. Because of the inclusion of energy balance equations and heat diffusion equation, accurate high-field characteristics can be obtained with this program. Silicon and Gallium Arsenide are the primary materials considered here, although other materials can be included if the user supplies the necessary material data file. In particular, wide bandgap materials such as Silicon Carbide and Gallium Nitride are included also. In addition to the high-power aspects, high-frequency devices are also simulated. These include superlattice based negative differential resistance devices and resonant tunneling diodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 30, 2001
- Accession Number
- ADA389579
Entities
People
- Hong-liang Cui
Organizations
- Stevens Institute of Technology