MOVPE Reactor for Deposition of Wide Band Gap Semiconductors
Abstract
A metalorganic vapor phase epitaxy reactor was constructed to study the epitaxy of BxGa1-xN and BxAl1-xN on 6H-SiC substrates. The solubility of boron in AlN and GaN was shown experimentally to be very low, less than 3 at %. This low solubility of boron in the group III nitrides was consistent with thermodynamic arguments based on the structure of the binary compounds involved. Adding boron to GaN increased its energy band gap up to the point of two phases forming. Unfortunately, even small additions of diborane greatly reduced the growth rate (at 1000 degrees Celsius) and the crystal quality of the deposits. This furnace is continuing to be used to study the epitaxy of GaN and AlN.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 20, 2001
- Accession Number
- ADA389584
Entities
People
- James H Edgar
Organizations
- Kansas State University