2-D Modeling of GaN HEMTS Incorporating the Piezoelectric Effect

Abstract

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are microwave power devices that promise to revolutionize the capability of Navy radar systems. The Office of Naval Research is currently finding basic research of developing microwave power amplifiers for use in future radar systems. This thesis incorporates piezoelectric (PZ) equations in the Silvaco Atlas software for modeling GaN/AlGaN structures. The PZ effect enhances a two dimensional electron gas at the GaN/AIGaN interface due to stress induced polarization.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2001
Accession Number
ADA389892

Entities

People

  • Karl P. Eimers

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Charge Carriers
  • Compound Semiconductors
  • Dielectric Permittivity
  • Electron Mobility
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Physics
  • Transistor Amplifiers
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics