Optical Properties and Lasing in GaN
Abstract
This report includes a book chapter (review article), two of our recent Physical Review B (PRB) articles, and our publication list. In the first PRB article femtosecond pump-probe spectroscopy and time-resolved photoluminescence were used to investigate the carrier dynamics in an In(0.18)Ga(0.82)N thin film photoexcited well above the band gap at 10 K. Optical gain occurring after 2.5 Ps time delay caused stimulated emission with a 28 Ps decay time. In the second article. femtosecond pump-probe transmission spectroscopy was used to study the nonequilibrium carrier dynamics in a GaN thin film at 10 K with carrier densities ranging from 4 x 10(exp 17) to 10(exp 19)/cu cm. Because of hot phonon effects, the carriers were strongly confined in a nonthermal distribution and collectively relaxed very slowly to the band edge for 1 ps. Excitonic resonances persisted at carrier densities well above the Mott density at early time delays indicating that the excitons do not strongly couple to the nonthermal electron-hole plasma.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2001
- Accession Number
- ADA390275
Entities
People
- Jiyun Song
- W. Shan
Organizations
- Oklahoma State University–Stillwater