Terahertz Gain and Loss in Semiconductor Quantum Structures
Abstract
The terahertz part of the electromagnetic spectrum is technology poor. An examination of the underlying device physics associated with the technologies that border this part of the spectrum suggest that it marks a transition regime between transport electronics at the low frequency end (microwave frequencies) to quantum transition devices like lasers on the high frequency end (infrared). Quantum transport devices, as the name implies embraces both transport physics and quantum transitions. The objectives of this research were to explore terahertz loss and gain in order to establish the principles for developing a solid-slate terahertz oscillator based on multi-quantum well superlattices. Key results were the following: (1) Resonant photon assisted transport in semiconductor superlattices; (2) Harmonic generation from electrically biased superlattices; and (3) Measurements of terahertz loss and gain in electrically biased superlattices.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 14, 2001
- Accession Number
- ADA390981
Entities
People
- S. J. Allen
Organizations
- University of California, Santa Barbara