Photoreflectance for the In-Situ Study and Characterization of Semiconductor Growth and Processing

Abstract

The objective of this program was to utilize photoreflectance for the in-situ and ex-situ study of a number of fundamental as well as applied properties of semiconductors, semiconductor microstructures, semiconductor surfaces/interfaces as well as actual device structures. These include: (a) the determination of the substrate temperatures and alloy composition during actual growth at elevated temperatures, (b) a detailed in-situ study of Fermi level pinning, passivation, and Schottky barrier formation as well as other surface state studies on a number of semiconductors, (c) characterization of actual devices structures such as heterojunction bipolar transistors and high electron mobility transistors, (d) interfacial strain at the Si/SiO2 interface, (e) InGaAs/AlGaAs and GaSb/GaAlSb quantum wells, multiple quantum wells, and superlattices, and (f) the electron-phono interaction in reduced dimensional systems.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1995
Accession Number
ADA391114

Entities

People

  • Fred H. Pollack

Organizations

  • Brooklyn College

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Boltzmann Equation
  • Electron Mobility
  • Electrons
  • Fermi Levels
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Wells
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing