Band Offsets and Infrared Detector Applications of Si(1-x-y)Ge(x)C(y) Alloys
Abstract
The band offset of Si(1-x-y)Ge(x)C(y)/Si in pseudomorphic structures grown on Si(100) substrates has been experimentally measured by using both electrical (capacitance-voltage) measurements and by making heterojunction internal photoemission (HIP) infrared detector. By measuring the cutoff wavelength of the IR detectors, one makes a direct measurement of the valence band offset. The two methods are in good agreement with each other, and find that as carbon is added to these structures, pseudomorphic to Si(100) substrates, the valence band in the SiGeC rises at a rate of ^26 meV/%C. Thus the valence band offset to Si decreases at the same rate. There is no detectable change on the position of the conduction band as C is added.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2001
- Accession Number
- ADA391267
Entities
People
- James C. Sturm
Organizations
- Princeton University