Growth and Characterization of CdTe on Silicon Substrates

Abstract

Further optimize the growth parameters for CdTe on Si to improve the layer quality. Optimize conventional substrate preparation procedure and investigate new procedures. By studying the interface structure of CdTe/Si and strain relaxation in CdTe Layer. Study the interface structure by means of high resolution transmission electron microscopy and scanning transmission electron microscopy. Observe the surface morphology by optical microscopy.

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Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1997
Accession Number
ADA391556

Entities

People

  • Sivalingam Sivananthan

Organizations

  • University of Chicago

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Detection
  • Detectors
  • Electron Microscopy
  • Electrons
  • Epitaxial Growth
  • High Resolution
  • Materials
  • Microscopy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Scanning
  • Semiconductors
  • Single Crystals
  • Substrates
  • Transmission Electron Microscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene