Solid-State Terahertz Sources
Abstract
GaN Transferred Electron Devices (TEDs) have been investigated on SiC substrates. SiC thinning and via-hole technology have been developed and applied to GaN TEDs for improved performance. Low-temperature tests have been conducted for better understanding of velocity-field characteristics. Passive micromachined circuitry has been investigated and deep etched vertical wall structures were explored. Micromachined-to-waveguide transitions have been fabricated and a test circuit for a micromachined waveguide to planar circuit probe has been designed, fabricated, and tested at W-band.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 10, 2001
- Accession Number
- ADA392022
Entities
People
- Dimitris Pavlidis
- Jack East
- Linda Katehi
Organizations
- University of Michigan