UV/Blue III-Nitride Micro-Cavity Photonic Devices
Abstract
The main objective of this Phase I research is to further develop III-nitride microcavity photonics device technologies. Consistent with our tasks, we have further improved our light emitter output efficiencies by optimizing device layer structures, including superlattice structures for enhancing the hole concentration, the thickness of the top Mg doped p-type layer to reduce the light absorption, and the structure of the active region. We have also carried out preliminary measurements on the size dependence of the micro-size light emitter characteristics, including I-V and L-I characteristics and the transient behavior. It was found that the micro-LEDs were very efficient and the heating effect was not significant in micro-LEDs that are greater than 10 micrometers. Our results also revealed that the operating speed increases with decreasing micro-LED size and the response time reduced from 0.21 ns for 15-micrometers LEDs to 0.15 ns for 8-micrometers LEDs. We have succeeded in fabricating several integrated photonics devices. Their operation under current injection has been achieved and their characteristics remain to be measured. The ability of 2D array integration with advantages of high speed, high resolution, low-temperature sensitivity, and applicability under versatile conditions, make III-nitride micro-LEDs a potential candidate for light sources in short-distance optical communications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 13, 2001
- Accession Number
- ADA392218
Entities
People
- Hongxing Jiang
- Jingyu Lin