Quantum Transport in Si/SiGe Nanostructures

Abstract

The project to study quantum transport in Si/SiGe heterostructures has, in addition to attacking the proposed goals, emphasized work on the two-dimensional metal-insulator transition. Ballistic Aharonov-Bohm devices were made and studied. The experimental results on the metal-insulator complement and sharply contrast with the results from much lower mobility systems like Si-MOSFETs. Data can be scaled according to an equation drawn from considerations of zero-temperature quantum critical points, but with a much larger conductivity (by a factor of nearly 100) than in the more generic (lower) mobility samples.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1999
Accession Number
ADA392619

Entities

People

  • Sean Washburn

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Contrast
  • Dielectrics
  • Electron Gas
  • Electrons
  • Equations
  • Field Effect Transistors
  • Heterojunctions
  • Magnetic Fields
  • Materials
  • Metal-Insulator Transitions
  • Military Research
  • Mobility
  • Quantum Wires
  • Transitions
  • Transport Ships
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Quantum Computing