AASERT: Rare Earth Arsenides, Magnetic Semi-Metal Epitaxy for Opto-Electronics
Abstract
Substantial effort was used for designing, constructing and commissioning the 'In-situ Atomic Level Growth and Characterization Facility', whose capital equipment was funded by an AFOSR DURIP (AF/F49620-98-1-0341). An ultra-high vacuum sample transfer system and a variable temperature scanning tunneling microscope were attached to two already existing molecular beam epitaxy systems and surface science equipment. In-situ sample transfer between the different systems allowed for better sample fabrication and characterization. The scanning tunneling microscope demonstrated atomic resolution images of gallium arsenide and erbium arsenide single crystal surfaces. A technique for controlling interfacial reactions and phase formation was developed for controlling metal penetration depth and electrical properties of elemental metal contacts on gallium arsenide. One student received a Masters Degree in Materials Science.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2000
- Accession Number
- ADA392742
Entities
People
- Chris J. Palmstrøm
Organizations
- University of Minnesota