Silicon Carbide Megawatt Power Devices for Combat Vehicles

Abstract

This report documents the impact of the Megawatt Program on SiC power development. The executive summary section contains an extensive discussion of the program objectives, technical approach, technical challenges, development tasks, program accomplishments, transition and scientific results. This program has advanced the SiC power device technology on many fronts spanning from devices to applications. Specifically, high performance PiN diodes, GTOs, DIMOS and MGTs were designed, simulated and characterized; manufacturable processes for PiN diodes and GTOs were developed; their static and dynamic performance was evaluated; Si and SiC hybrid half-bridge inverter modules were fabricated; and novel application concepts for SiC power devices were formulated and analyzed. The knowledge accumulated under this program was shared with the sponsor and the DoD community at first and then published to accelerate the technology transition.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2001
Accession Number
ADA393058

Entities

People

  • Marlo Ghezzo

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Compound Semiconductors
  • Computational Fluid Dynamics
  • Electronics Industry
  • Electronics Laboratories
  • Engineers
  • Field Effect Transistors
  • Inverters
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Power Converters
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Surface Properties
  • Two Dimensional

Fields of Study

  • Engineering

Readers

  • Defense Technology Research and Development.
  • Electrical Engineering
  • Integrated Circuit Design and Technology.