UV/Blue III-Nitride Micro-Cavity Photonic Devices
Abstract
Consistent with our tasks, we have further improved our micro-size light emitter output efficiencies by optimizing device layer structures, including superlattice structures for enhancing the hole concentration, the thickness of the top Mg doped p-type layer to reduce the light absorption, and the structure of the active region. We have also carried out measurements on the size dependence of the micro-size light emitter characteristics. It was found that the micro-LEDs were very efficient and the heating effect was not significant in micro-LEDs that are greater than 10 micrometers. Our results also revealed that the operating speed increases with decreasing micro-LED size and the response time reduced from 0.21 ns for 15-micrometers LEDs to 0.15 ns for 8-micrometers LEDs. Several integrated photonics devices have been fabricated and their operation under current injection has been achieved. Sub-micron waveguides have also been fabricated from AlGaN/GaN multiple quantum wells and their optical properties have been measured. Effects related to reduced size have been observed. The ability of 2D array integration with advantages of high speed, high resolution, low-temperature sensitivity, and applicability under versatile conditions, make III-nitride micro-LEDs a potential candidate for light sources in short-distance optical communications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 2001
- Accession Number
- ADA393382
Entities
People
- Hongxing Jiang
- Jingyu Lin