Nanoscale Feature Development
Abstract
Nanoscale Feature Development was the thrust of this program. Emphasis was on structures and mechanisms associated with material removal from semiconductor surfaces. The experiments were designed to examine the effects of point, line, and volume defects on material removal. To do this, native defects and those created by chemical and physical means were investigated, with emphasis on the modification of these defects by chemical and laser-assisted processes. The goal was to relate nanoscale defect development to atomic-level interactions. Scanning tunneling microscopy was used to achieve the spatial resolution needed. The projects represented new opportunities and defined new challenges while capitalizing on prior AR%sponsored research and laboratory development. The proposed experiments were unique in their emphasis on surface modification and the manipulation of nanoscale defect structures. They impact those who deal with material removal from surfaces, particularly from semiconductors. Several focused on fundamental mechanistic issues. While this program specifically discussed chemical etching by chlorine, the results are more general since similar effects would be expected under somewhat different processing conditions with bromine or iodine.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 10, 1999
- Accession Number
- ADA393458
Entities
People
- J. H. Weaver
Organizations
- University of Minnesota