Self-Assembled (In,Ga)As/GaAs Quantum-Dot Nanostructures: Strain Distribution and Electronic Structure

Abstract

This document presents a simple analytical method for calculating the strain distribution in and around self-assembled (In,Ga)As/GaAs quantum-dot nanostructures. The dots are assumed to be buried in an infinite medium so that the effects of free surfaces can be neglected. The model-based on classical continuum elasticity-is capable of handling dots of arbitrary shapes; here, however, only dots with pyramidal and truncated-pyramidal shapes are considered. The approximate shape of the dots is extracted from high-resolution transmission electron microscope observations. The electronic energy levels in the dots are calculated by solving the three-dimensional effective mass Schroedinger equation. The carrier confinement potential in this equation is modified by the strain distribution. Because the dots are in a strong confinement regime, the effects of Coulomb interactions are neglected. The calculated confined eigen-energies agree with our experimental photoluminescence data. The calculations also support previous results reported by others.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2001
Accession Number
ADA393490

Entities

People

  • D. Pal
  • E. Towe
  • G. Stoleru

Organizations

  • University of Virginia

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Crystal Lattices
  • Crystals
  • Elastic Properties
  • Electron Microscopes
  • Energy Bands
  • Energy Levels
  • Ground State
  • Materials
  • Modulus Of Elasticity
  • Nanostructures
  • Optical Properties
  • Quantum Dots
  • Semiconductors
  • Three Dimensional
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Fluid Dynamics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing