Creep Behavior of Polymer Precursor Derived Si3N4/SiC Nanocomposites

Abstract

The third quarter of FY2001 has been devoted to the determination of creep behavior of the one of the two categories of materials produced by this project-silicon nitride/silicon carbide micro-nano composite sintered by Spark Plasma Sintering (SPS). The microstructural details highlight the characteristics of; (1) existing of turbostratic graphite phase at the intergranular regions; and (2) the non-equilibrium distribution of glassy phases. The creep curves show a distinct stage of steady state creep, and investigations under varied temperature and stress level show stress exponent of 0.7-2.0 and activation energy of about 400-800kJ/mol.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 2001
Accession Number
ADA394236

Entities

People

  • Amiya K. Mukherjee

Organizations

  • University of California, Davis

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Ceramic Materials
  • Chemical Engineering
  • Composite Materials
  • Compound Semiconductors
  • Energy
  • Grain Boundaries
  • Graphitic Materials
  • Heat Of Activation
  • Materials
  • Materials Processing
  • Materials Science
  • Nanocomposites
  • Precursors
  • Silicon
  • Silicon Carbide
  • Steady State

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Powder metallurgy of Titanium alloys.