Multiscale Approach to Device Simulation Combining Semiclassical and Quantum Regions

Abstract

Our work was focused on electronic transport, particularly the importance of quantum effects, and on the reliability of semiconductor devices with ultra-submicrometer channel length. We have applied our quantum transport model based on Schroedinger Equation Monte Carlo simulation to the problem of impact ionization. We have shown that collision broadening lowers the threshold of impact ionization. In the area of reliability, we have suggested and simulated a new method to avoid latent failures of ultra-submicrometer CMOS devices.

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Document Details

Document Type
Technical Report
Publication Date
Oct 30, 2001
Accession Number
ADA396230

Entities

People

  • Karl Hess
  • Leonard F. Register

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Collision Broadening
  • Collisions
  • Electronics
  • Electronics Laboratories
  • Equations
  • Failure Mode And Effect Analysis
  • Integrated Circuits
  • Ionization
  • Reliability
  • Scattering
  • Scientists
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Students
  • Transport Ships

Fields of Study

  • Engineering
  • Physics

Readers

  • Computational Fluid Dynamics (CFD)
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Statistical inference.

Technology Areas

  • Microelectronics
  • Quantum Computing