Surface Engineering for Compliant Epitaxy

Abstract

Infrared sensing in the two wavelength ranges (3-5 micrometers and 8-12 micrometers) has important military applications. Most commonly used detecting materials and devices are HgCdTe-based detectors and quantum-well infrared photodetectors (QWIP). Antimonide-based III-V materials also have potentials. To further realize a multi-wavelength imaging device, however, requires the integration of infrared photodetector array consisting of materials having different bandgap energies (usually having different lattice dimensions too). A major challenge arises - to obtain high-quality low-defect heteropitaxial layers.

Document Details

• Document Type: Technical Report
• Publication Date: Jul 20, 2001
• Accession Number: ADA397507

Entities

People

• I. Adesida
• John Connelly
• K. C. Hsieh
• K. Y. Cheng
• Ramon Martinelli

Organizations

• University of Illinois Urbana–Champaign

Tags

Communities of Interest

• Advanced Electronics

DTIC Thesaurus Topics

• Air Force
• Aluminum Oxides
• Chemistry
• Compound Semiconductors
• Crystal Growth
• Crystal Lattices
• Crystals
• Electronic Materials
• Engineering
• Epitaxial Growth
• Films
• Low Temperature
• Materials
• Materials Science
• Molecular Beam Epitaxy
• Students
• Transitions

Fields of Study

• Materials science

Readers

• Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
• Semiconductor Device Technology

Technology Areas

• Quantum Computing