An Integrated Approach to III-Nitride Crystal Growth and Wafering

Abstract

Centimeter size, transparent AlN crystals were grown at NCSU. TEM and XRT examination performed at ASU and SUNYSB revealed that the crystals are of highest quality and do not contain any visible extended defects. GaN crystals grown at Clemson by ammonothermal growth method have been grown to up to 5 mm in size. PL studies at ASU showed sharp excitonic emission, indicative of good quality. XRT showed mosaicity in some crystals. Work at Cornell was focusing on the development of equipment. A sandwich type reactor for vapor growth of GaN and a reactor for flux based growth are near the completion. Reaction modeling efforts have identified equilibrium species in the AlN sublimation growth while the reactor modeling has developed thermal model for the high temperature AlN reactor and flow dynamics for the ammonothermal growth.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2001
Accession Number
ADA397591

Entities

People

  • D. Bliss
  • D. Brenner
  • F. Disalvo
  • M. Callahan
  • Russ E. Davis
  • S. Beaudoin
  • Zlatko Sitar

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics
  • C4I
  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Crystal Structure
  • Diffraction
  • First Principles Calculations
  • Heat Energy
  • Heat Transfer
  • Materials
  • Materials Engineering
  • Materials Science
  • Mechanical Engineering
  • Military Research
  • Spectra
  • Spectroscopy
  • Temperature Gradients

Readers

  • Materials Science and Engineering.
  • Research Science/Academic Research
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene