Generation of Large-Area, Crack-Free GaN Layers on Si Substrates
Abstract
The development of truly compliant layers, compatible with Si-based tooling, was investigated for the growth of GaN on a Si substrate. For this project, thin Si layers were fabricated on a metal bonding layers. The metal bonding medium was chosen such that it would be liquid at the GaN growth temperature and hence be compliant, allowing lateral motion of the Si template layer as growth proceeded and during the cooling of the grown structure from the growth temperature. The stability of thin Si substrate layer during thermal cycling was determined both experimentally and through modeling. Constraints on the formation of metal bonded structures based on the interplay of the elastic strain energy and bond energy of a template/DB multi-layer structure supported on a metal layer were developed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2001
- Accession Number
- ADA397736
Entities
People
- Thomas F Kuech
Organizations
- University of Wisconsin–Madison