Infrared Material Development Based on III-V Antimonides

Abstract

Near infrared optical absorption and photoreflectance were carried out on InGaAsN with Sb for infrared material development. Sb was used to improve the crystal growth of GaN by molecular beam epitaxy.

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Document Details

Document Type
Technical Report
Publication Date
Dec 10, 2001
Accession Number
ADA397768

Entities

People

  • Wen I. Wang

Organizations

  • Columbia University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Crystal Growth
  • Diffraction
  • Electrical Engineering
  • Energy Bands
  • Epitaxial Growth
  • Light Sources
  • Materials
  • Measurement
  • Military Research
  • Molecular Beam Epitaxy
  • Optical Properties
  • Quantum Wells
  • Scattering
  • Semiconductors
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology