International Workshop of Device Technology: Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics
Abstract
The Proceedings for International Workshop on Device Technology: Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, 3-5 September 2001. This meeting focuses on different aspects concerning electrical, structural and physico-chemical characterization of alternative oxide materials, the so called high-K dielectrics, which are being considered as replacements for SiO2 as gate dielectrics in ultra-large scale integration devices. Recent progress in sub-2 nm oxide and oxynitride gate dielectrics will be also approached as they constitute the present stage of semiconductor technology. Finally, the emerging field of oxide, oxynitride and alternative oxide films on SiC will also compose the program. It is the purpose of this Workshop to establish a vivid and quite informal meeting for discussing the subjects in the presence of leading researchers from major semiconductor device manufacturers, research centers and university laboratories.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 28, 2001
- Accession Number
- ADA397772
Entities
People
- Israel Baumvol
Organizations
- Federal University of Rio Grande do Sul