High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers
Abstract
High-speed semiconductor lasers operating at high temperatures are desired for future aircraft avionics systems to reduce weight, increase data rates, and eliminate undesired electromagnetic emissions. Strained InGaAs quantum well lasers have demonstrated excellent temperature performance and frequency response. To determine what trade-offs exist between high-temperature performance and high-speed performance In0.2Ga0.8As quantum-wells were fabricated and tested to determine the optimum number of quantum wells to provide the highest frequency response at temperatures up to 150 deg C. This presentation reports on the design and development of high-frequency In0.2Ga0.8As single and multiple quantum well lasers for operation at high temperatures. The lasers were grown by molecular beam epitaxy and fabricated into gain-guided lasers for laser material characterization and ridge-waveguide lasers providing single-mode operation for net modal gain and high-frequency analysis. The ridge-waveguide lasers operated in continuous-wave current mode up to temperatures of 90 deg C for single quantum well devices and up to 150 deg C for multiple quantum well devices. The single quantum well lasers exhibited a -3dB frequency response 7 GHz for room-temperature operation and >3 GHz at 90 deg C. The four quantum well laser device had a -3dB frequency response of tilde 14 GHz for room-temperature operation and tilde 5 GHz at 150 deg C. This the highest temperature for high-frequency operation reported to date.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 2000
- Accession Number
- ADA398284
Entities
People
- Hank D. Jackson
- James E. Ehret
- Jeffrey C. Wiemeri
- John P. Loehr
- William J. Siskaninetz
Organizations
- Air Force Research Laboratory