Single Electron Phenomena in Semiconductor Structures

Abstract

This report contains a summary of the work carried out on the quantised dc current produced by the transmission of Surface Acoustic Waves through a narrow channel in a GaAs-AIGaAs heterostructure. It is shown that dynamic modulation of the potential at the channel entrance produces a significant effect on the quantisation. The technology of deviced fabrication was investigated, etched in-plane gates utilising the 2D electron gas produced a harder confinement than metal split gates. Single electron transport through dots fabricated with two-level metallisation was studied and it is concluded that this is a very promising technique for high frequency operation.

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Document Details

Document Type
Technical Report
Publication Date
Nov 25, 2001
Accession Number
ADA398446

Entities

People

  • M. Pepper

Organizations

  • University of Cambridge

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Sensors

DTIC Thesaurus Topics

  • Accuracy
  • Acoustic Waves
  • Electron Gas
  • Electrons
  • Energy Levels
  • Fabrication
  • Frequency
  • Magnetic Fields
  • Measurement
  • Quantum Dots
  • Semiconductors
  • Shot Noise
  • Standing Waves
  • Surface Acoustic Wave Devices
  • Surface Acoustic Waves
  • Transport Ships
  • Waves

Fields of Study

  • Materials science

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics