Terahertz Plasma Wave Electronics

Abstract

We performed an experimental and theoretical study of nonresonant detection of sub-terahertz radiation in GaAs/AlGaAs and GaN/AlGaN heterostructure field effect transistors. The experiments were performed in a wide range of temperatures (8-300K) and for frequencies ranging from 100GHz to 600GHz. The photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage. The results were interpreted using a new theoretical model that shows that the maximum in photoresponse can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADA398910

Entities

People

  • Michael Shur

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Detection
  • Detectors
  • Electromagnetic Radiation
  • Electron Density
  • Electron Gas
  • Electronics
  • Electrons
  • Equations
  • Field Effect Transistors
  • Frequency
  • Plasma Oscillation
  • Plasma Waves
  • Semiconductor Devices
  • Semiconductors
  • Terahertz Radiation
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science
  • Physics

Readers

  • Electronics Engineering
  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics