Radiation Effects in Quantum Well Detectors
Abstract
We performed photoluminescence (PL) measurements of interband transitions in InGaAs/AlGaAs multiple quantum wells before and after fast neutron irradiation. It is shown that the intensity of the intersubband transitions is dramatically decreased in heavily irradiated samples, which can be explained in terms of trapping of the two-dimensional electrons by the irradiation induced defects. A negative persistent effect was also observed in the heavily irradiated samples. It is noted that the recovery of the electrons from this effect occurs at two temperature stages with thresholds at ^ 104K and -250K, which indicates that the electrons were released from two different traps as the temperature is increased. We also investigated the effects of 1 MeV proton beam with doses ranging between 10 x 10(exp 12) and 5.0 x 10(exp 14)/sq cm on GaAs/AlGaAs. It is observed that the total integrated area of the intersubband transitions are dramatically decreased as the irradiation dose is increased This reduction was interpreted as being due to the trapping of the two-dimensional electron gas by the irradiation-induced-defects. The total integrated areas of the intersubband transitions were studied as a function of irradiation doses for samples cut from wafers with structures containing either bulk or superlattice barriers. The results reveal that the intersubband transitions in samples with superlattice barriers degrade at a faster rate as compared to those transitions in samples with bulk barriers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 2001
- Accession Number
- ADA399285
Entities
People
- Omar Manasreh
Organizations
- Air Force Research Laboratory