Interdiffusion of HgTe/CdTe Hetero-Interfaces
Abstract
In this paper results are presented from a study of interdiffusion in HgTe/CdTe heterostructures. The samples were grown by MBE at HRL Laboratories and had Cd x values ranging from 0.2 to 0.35. The samples were annealed at temperatures ranging from 250 deg C to 425 deg C in both Hg vapor and vacuum ambients. The samples annealed under vacuum were coated with a layer of CdTe prior to annealing. The data were simulated using Darken's equation, and results show strong agreement between the simulated and experimental profiles. Significantly more diffusion was observed for anneals under Hg-rich ambients than under vacuum. For Hg-rich anneals, the activation energy was 1.50 eV at temperatures less than 350 deg C and 1.33 eV at higher temperatures. This is the first time that two activation energies for the interdiffusion coefficient have been reported. The mechanisms responsible for this behavior are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1998
- Accession Number
- ADA400077
Entities
People
- H. G. Robinson
- J. L. Johnson
- K. Kosai
- S. L. Gleixner
- W. J. Hamilton
Organizations
- SRI International